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| Semiconductor 2N6975, 2N6976, 2N6977, 2N6978 5A, 400V and 500V N-Channel IGBTs Package JEDEC TO-204AA BOTTOM VIEW EMITTER COLLECTOR (FLANGE) April 1995 Features * 5A, 400V and 500V * VCE(ON) 2V * TFI 1s, 0.5s * Low On-State Voltage * Fast Switching Speeds * High Input Impedance GATE Applications * Power Supplies * Motor Drives * Protection Circuits Terminal Diagram N-CHANNEL ENHANCEMENT MODE C G Description The 2N6975, 2N6976, 2N6977 and the 2N6978 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low-power integrated circuits. E PACKAGING AVAILABILITY PART NUMBER 2N6975 2N6976 2N6977 2N6978 PACKAGE TO-204AA TO-204AA TO-204AA TO-204AA BRAND NOTE: When ordering, use the entire part number. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified. 2N6975/2N6977 (Note 1) 400 400 5 20 5 10 100 0.8 -55 to +150 2N6976/2N6978 (Note 1) 500 500 5 20 5 10 100 0.8 -55 to +150 UNITS V V V V A A W W/oC oC Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES Collector-Gate Voltage (RGE = 1M) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VCGR Reverse Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VCES(REV.) Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGE Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . TJ, TSTG NOTE: 1. JEDEC registered value. HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright (c) Harris Corporation 1995 File Number 2297.2 3-1 Specifications 2N6975, 2N6976, 2N6977, 2N6978 Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS 2N6975/2N6977 PARAMETERS Collector-Emitter Breakdown Voltage Gate Threshold Voltage SYMBOL BVCES VGE(TH) lCES TEST CONDITIONS lC = 1 mA, VGE = 0 VGE = VCE, IC = 1mA VCE = 400V VCE = 500V TC = +125oC VCE = 400V VCE = 500V Gate-Emitter Leakage Current IGES IECS VCE(ON) VGE = 20V, VCE = 0V RGE = 0, VEC = 5V IC = 5A, VGE = 10V IC = 10A, VGE = 20V Gate-Emitter Plateau Voltage VGEP QG(ON) tD(ON) tR tD(ON) tFI IC = 5A, VCE = 10V IC = 5A, VCE = 10V IC = 5A VCE(CLP) = 300V L = 50H TJ = +125oC VGE = 10V RG = 50 2N6975 2N6976 2N6977 2N6978 Turn-Off Energy Loss per Cycle (Off Switching Dissipation= WOFF x Frequency) WOFF IC = 5A VCE(CLP) = 300V L = 50H TJ = +125oC VGE = 10V RG = 50 2N6975 2N6976 2N6977 2N6978 MIN 400 (Note 1) 2 (Note 1) MAX 2N6976/2N6978 MIN 500 (Note 1) 2 (Note 1) MAX UNITS V 4.5 (Note 1) 250 (Note 1) - 4.5 (Note 1) - V A A A A A ns Zero Gate Voltage Collector Current - - 250 (Note 1) - - 1000 (Note 1) - - - - 1000 (Note 1) 100 (Note 1) 5 (Note 1) 2 (Note 1) 2.5 6.8 (Note 1) 25 (Note 1) - 100 (Note 1) 5 (Note 1) 2 (Note 1) 2.5 6.8 (Note 1) 25 (Note 1) - Reverse Collector-Emitter Leakage Current Collector-Emitter On Voltage - - mA - - V 3.4 (Note 1) 12 (Note 1) 3.4 (Note 1) 12 (Note 1) V V On-State Gate Charge nC Turn-On Delay Time Rise Time Turn-Off Delay Time 50 Max 50 Max 400 Max (Note 1) 1000 Max (Note 1) 500 Max (Note 1) 1000 Max (Note 1) 500 Max (Note 1) ns ns ns Fall Time ns ns J J Thermal Resistance Junction-to-Case NOTE: 1. JEDEC registered value. RJC 1.25 (Note 1) oC/W 3-2 2N6975, 2N6976, 2N6977, 2N6978 Typical Performance Curves EFFECTIVE TRANSIENT THERMAL IMPEDANCE (NORMALIZED) VGE = VCE IC = 1mA ZJC(t) = r(t)RJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(PEAK) - TC = P(PEAK)ZJC(t) 1.3 NORMALIZED GATE THRESHOLD VOLTAGE 1.2 1.1 1.0 0.9 0.8 0.7 10 D = 0.5 1.0 D = 0.2 0.1 D = 0.05 SINGLE PULSE -50 0 +50 +100 +150 0.01 0.01 0.1 TC , JUNCTION TEMPERATURE (oC) 1.0 10 t, TIME (ms) 100 1000 FIGURE 1. TYPICAL NORMALIZED GATE THRESHOLD VOLTAGE AS A FUNCTION OF JUNCTION TEMPERATURE FOR ALL TYPES FIGURE 2. NORMALIZED THERMAL RESPONSE CHARACTERISTICS FOR ALL TYPES 10 ICE, COLLECTOR CURRENT (A) ICE, COLLECTOR CURRENT (A) PULSE TEST, VCE = 10V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 7.5 10 VGE = +10V VGE = +8V 7.5 VGE = +7V VGE = +6V VGE = +5V TC = +25oC 5.0 +125oC 5.0 2.5 2.5 VGE = +4V 0 -40oC +25oC 0 0 2.5 5.0 7.5 10 VGE, GATE-TO-EMITTER VOLTAGE (V) 0 1 2 3 4 5 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 3. TYPICAL TRANSFER CHARACTERISTICS FOR ALL TYPES 10 PULSE TEST PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX FIGURE 4. TYPICAL SATURATION CHARACTERISTICS FOR ALL TYPES 1200 f = 0.1MHz 1000 ICE, COLLECTOR CURRENT (A) 8 VGE = 10V C, CAPACITANCE (pF) 800 6 600 CISS 4 400 200 CRSS 2 COSS 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VCE, COLLECTOR-TO-EMITTER ON VOLTAGE (V) 0 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 5. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE AS A FUNCTION OF COLLECTOR CURRENT FOR ALL TYPES FIGURE 6. CAPACITANCE AS A FUNCTION OF COLLECTORTO-EMITTER VOLTAGE FOR ALL TYPES 3-3 2N6975, 2N6976, 2N6977, 2N6978 Typical Performance Curves (Continued) fOP , MAXIMUM OPERATING FREQUENCY (kHz) 140 TC = oC 100 90 100 fMAX1 = 0.05/tD(OFF) fMAX2 = (PD - PC)/WOFF 2N6975 100 2N6976 80 60 40 VGE = 10V RG = 50 RL = 300/ce L = 50H VCC = 300V TJ = +150oC 20 1 2 3 4 5 6 7 8 9 10 ICE, COLLECTOR CURRENT (A) 2N6977 2N6978 WOFF = IC * VCEdt VGE IC 120 VCE FIGURE 7. TYPICAL INDUCTIVE SWITCHING WAVEFORMS PD: ALLOWABLE DISSIPATION PC: CONDUCTION DISSIPATION FIGURE 8. MAXIMUM OPERATING FREQUENCY vs COLLECTOR CURRENT (TYPICAL) 500 VCE, COLLECTOR-EMITTER VOLTAGE (V) 10 RL = 100 GATE IG (REF) = 0.43mA VGE = 10V EMITTER VOLTAGE VCC = BVCES 6 375 VCC = BVCES 8 250 0.75 BVCES 0.50 BVCES 0.25 BVCES 0.75 BVCES 0.50 BVCES 0.25 BVCES 4 125 2 COLLECTOR-EMITTER VOLTAGE 0 20 IG (REF) IG (ACT) TIME (s) 80 IG (REF) IG (ACT) 0 FIGURE 9. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT (REFER TO APPLICATION NOTES AN7254 AND AN7260) RL L = 50H 1/RG = 1/RGEN + 1/RGE RGEN = 100 VCC 300V + - 20V 0V RGE = 100 FIGURE 10. INDUCTIVE SWITCHING TEST CIRCUIT 3-4 VGE, GATE-EMITTER VOLTAGE (V) This datasheet has been downloaded from: www..com Datasheets for electronic components. |
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